NTMFS4833NT1G Mosfet Power Transistor MOSFET NFET 30V 191A 2MOHM
p channel mosfet driver circuit
,mosfet motor control circuit
NTMFS4833NT1G Mosfet Power Transistor MOSFET NFET 30V 191A 2MOHM
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb−Free Devices
Applications
• Refer to Application Note AND8195/D
• CPU Power Delivery
• DC−DC Converters
• Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
|
Parameter |
Symbol |
Value |
Unit |
||
|
Drain−to−Source Voltage |
VDSS |
30 |
V |
||
|
Gate−to−Source Voltage |
VGS |
±20 |
V |
||
|
Continuous Drain Current RqJA (Note 1) |
Steady State |
TA = 25°C |
ID |
28 |
A |
|
TA = 85°C |
20.5 |
||||
|
Power Dissipation RqJA (Note 1) |
TA = 25°C |
PD |
2.7 |
W |
|
|
Continuous Drain Current RqJA (Note 2) |
TA = 25°C |
ID |
16 |
A |
|
|
TA = 85°C |
12 |
||||
|
Power Dissipation RqJA (Note 2) |
TA = 25°C |
PD |
1.1 |
W |
|
|
Continuous Drain Current RqJC (Note 1) |
TC = 25°C |
ID |
191 |
A |
|
|
TC = 85°C |
138 |
||||
|
Power Dissipation RqJC (Note 1) |
TC = 25°C |
PD |
113.6 |
W |
|
|
Pulsed Drain Current |
TA = 25°C, tp =10ms |
IDM |
288 |
A |
|
|
Operating Junction and Storage Temperature |
TJ, TSTG |
−55 to +150 |
°C |
||
|
Source Current (Body Diode) |
IS |
104 |
A |
||
|
Drain to Source dV/dt |
dV/dt |
6 |
V/ns |
||
|
Single Pulse Drain−to−Source Avalanche Energy(TJ =25°C,VDD =30V,VGS =10V, IL = 35 Apk, L = 1.0 mH, RG = 25 W) |
EAS |
612.5 |
mJ |
||
|
Lead Temperature for Soldering Purposes (1/8′′ from case for 10 s) |
TL |
260 |
°C |
||
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