CSD18540Q5B RF Power Mosfet Transistors , N Channel Mosfet Circuit NexFET Pwr MOSFET
p channel mosfet driver circuit
,mosfet motor control circuit
CSD18540Q5B Mosfet Power Transistor MOSFET 60V, N-channel NexFET Pwr MOSFET
1 Features
- Ultra-Low Qg and Qgd
-
Low-Thermal Resistance
-
Avalanche Rated
-
Lead-Free Terminal Plating
-
RoHS Compliant
-
Halogen Free
-
SON 5-mm × 6-mm Plastic Package
2 Applications
-
DC-DC Conversion
-
Secondary Side Synchronous Rectifier
-
Isolated Converter Primary Side Switch
-
Motor Control
3 Description
This 1.8-mΩ, 60-V NexFETTM power MOSFET is designed to minimize losses in power conversion applications with a SON 5-mm × 6-mm package.
Product Summary
|
TA = 25°C |
TYPICAL VALUE |
UNIT |
||
|
VDS |
Drain-to-Source Voltage |
60 |
V |
|
|
Qg |
Gate Charge Total (10 V) |
41 |
nC |
|
|
Qgd |
Gate Charge Gate-to-Drain |
6.7 |
nC |
|
|
RDS(on) |
Drain-to-Source On Resistance |
VGS = 4.5 V |
2.6 |
mΩ |
|
VGS =10V |
1.8 |
|||
|
VGS(th) |
Threshold Voltage |
1.9 |
V |
|
Device Information
|
DEVICE |
QTY |
MEDIA |
PACKAGE |
SHIP |
|
CSD18540Q5B |
2500 |
13-Inch Reel |
SON 5.00-mm × 6.00-mm Plastic Package |
Tape and Reel |
|
CSD18540Q5BT |
250 |
7-Inch Reel |
Absolute Maximum Ratings
|
TA = 25°C |
VALUE |
UNIT |
|
|
VDS |
Drain-to-Source Voltage |
60 |
V |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
ID |
Continuous Drain Current (Package Limited) |
100 |
A |
|
Continuous Drain Current (Silicon Limited), TC = 25°C |
205 |
||
|
Continuous Drain Current(1) |
29 |
||
|
IDM |
Pulsed Drain Current, TA = 25°C(2) |
400 |
A |
|
PD |
Power Dissipation(1) |
3.8 |
W |
|
Power Dissipation, TC = 25°C |
188 |
||
|
TJ, Tstg |
Operating Junction, Storage Temperature |
–55 to 175 |
°C |
|
EAS |
Avalanche Energy, Single Pulse ID =80A,L=0.1mH,RG =25Ω |
320 |
mJ |
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