CSD18534Q5A Logic Level Mosfet Power Transistor MOSFET 60V N-Ch NexFET Pwr MOSFET
p channel mosfet driver circuit
,mosfet motor control circuit
CSD18534Q5A Mosfet Power Transistor MOSFET 60V N-Ch NexFET Pwr MOSFET
1 Features
- Ultra-Low Qg and Qgd
-
Low Thermal Resistance
-
Avalanche Rated
-
Logic Level
-
Pb Free Terminal Plating
-
RoHS Compliant
-
Halogen Free
-
SON 5 mm × 6 mm Plastic Package
2 Applications
-
DC-DC Conversion
-
Secondary Side Synchronous Rectifier
-
Isolated Converter Primary Side Switch
-
Motor Control
3 Description
This 7.8 mΩ, 60 V, SON 5 × 6 mm NexFETTM power MOSFET is designed to minimize losses in power conversion applications.
Product Summary
|
TA = 25°C |
TYPICAL VALUE |
UNIT |
||
|
VDS |
Drain-to-source voltage |
60 |
V |
|
|
Qg |
Gate charge total (10 V) |
17 |
nC |
|
|
Qgd |
Gate charge gate-to-drain |
3.5 |
nC |
|
|
RDS(on) |
Drain-to-source on-resistance |
VGS = 4.5 V |
9.9 |
mΩ |
|
VGS =10V |
7.8 |
mΩ |
||
|
VGS(th) |
Threshold voltage |
1.9 |
V |
|
Ordering Information
|
DEVICE |
QTY |
MEDIA |
PACKAGE |
SHIP |
|
CSD18534Q5A |
2500 |
13-Inch Reel |
SON 5 mm × 6 mm Plastic Package |
Tape and Reel |
|
CSD18534Q5AT |
250 |
7-Inch Reel |
Absolute Maximum Ratings
|
TA = 25°C |
VALUE |
UNIT |
|
|
VDS |
Drain-to-source voltage |
60 |
V |
|
VGS |
Gate-to-source voltage |
±20 |
V |
|
ID |
Continuous drain current (package limited) |
50 |
A |
|
Continuous drain current (silicon limited), TC = 25°C |
69 |
||
|
Continuous drain current, TA = 25°C(1) |
13 |
||
|
IDM |
Pulsed drain current, TA = 25°C(2) |
229 |
A |
|
PD |
Power dissipation(1) |
3.1 |
W |
|
Power dissipation, TC = 25°C |
77 |
||
|
TJ, Tstg |
Operating junction, Storage temperature |
–55 to 150 |
°C |
|
EAS |
Avalanche energy, single pulse ID =40A,L=0.1mH,RG =25Ω |
80 |
mJ |
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