LM5109BMAX/NOPB Power Path Management IC Gate Drivers Hi Vtg 1A Peak Half Bridge Gate Dvr
power management integrated circuit
,microchip battery management
LM5109BMAX/NOPB Power Path Management IC Gate Drivers Hi Vtg 1A Peak Half Bridge Gate Dvr
1 Features
- Drives Both a High-Side and Low-Side N-Channel MOSFET
-
1-A Peak Output Current (1.0-A Sink and 1.0-A Source)
-
Inputs Compatible With Independent TTL and CMOS
-
Bootstrap Supply Voltage to 108-V DC
-
Fast Propagation Times (30 ns Typical)
-
Drives 1000-pF Load With 15-ns Rise and Fall Times
-
Excellent Propagation Delay Matching (2 ns Typical)
-
Supply Rail Undervoltage Lockout
-
Low Power Consumption
-
8-Pin SOIC and Thermally-Enhanced 8-Pin WSON Package
2 Applications
-
Current-Fed, Push-Pull Converters
-
Half- and Full-Bridge Power Converters
-
Solid-State Motor Drives
-
Two-Switch Forward Power Converters
3 Description
The LM5109B device is a cost-effective, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with cost-effective TTL and CMOS-compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. The device is available in the 8-pin SOIC and thermally- enhanced 8-pin WSON packages.
Device Information
|
PART NUMBER |
PACKAGE |
BODY SIZE (NOM) |
|
LM5109B |
SOIC (8) |
4.90 mm × 3.91 mm |
|
WSON (8) |
4.00 mm × 4.00 mm |
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