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FDPF10N60NZN Channel Npn Bipolar Transistor 38W Tc Through Hole TO 220F

Minimum Order Quantity :	10 pcs	Price :	Negotiation
Packaging Details :	TUBE	Delivery Time :	STOCK
Payment Terms :	T/T, Western Union ， ESCROW	Supply Ability :	10000pcs

Place of Origin:	CHINA	Brand Name:	FSC
Model Number:	FDPF10N60NZ

Detail Information
Category:	Power MOSFET	Maximum Drain Source Voltage (V):	600V
Maximum Gate Source Voltage (V):	±25V	Maximum Gate Threshold Voltage (V):	5V
Maximum Continuous Drain Current (A):	10A	Maximum Gate Source Leakage Current (nA):	10000NA
Maximum Drain Source Resistance (mOhm):	750@10V	Typical Gate Charge @ Vgs (nC):	23@10V
High Light:	epitaxial planar pnp transistor , silicon npn power transistors

Product Description

FDPF10N60NZ NPN PNP Transistors N-Channel 600V 10A (Tc) 38W (Tc) Through Hole TO-220F

N-Channel MOSFET 600V, 10A, 0.75

Features

•RDS(on) = 0.64 ( Typ.)@ VGS = 10V, ID = 5A

• Low Gate Charge ( Typ. 23nC)

• Low Crss ( Typ. 10pF)

• Fast Switching

• 100% Avalanche Tested

• Improved dv/dt Capability

• ESD Improved Capability

• RoHS compliant

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to minimize

on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies and active power factor

correction

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Product Category	Power MOSFET
Configuration	Single
Process Technology	UniFET II
Channel Mode	Enhancement
Channel Type	N
Number of Elements per Chip	1
Maximum Drain Source Voltage (V)	600
Maximum Gate Source Voltage (V)	±25
Maximum Gate Threshold Voltage (V)	5
Maximum Continuous Drain Current (A)	10
Maximum Gate Source Leakage Current (nA)	10000
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	750@10V
Typical Gate Charge @ Vgs (nC)	23@10V
Typical Gate Charge @ 10V (nC)	23
Typical Input Capacitance @ Vds (pF)	1110@25V
Maximum Power Dissipation (mW)	38000
Typical Fall Time (ns)	50
Typical Rise Time (ns)	50
Typical Turn-Off Delay Time (ns)	70
Typical Turn-On Delay Time (ns)	25
Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	150
Packaging	Tube
Supplier Package	TO-220FP
Standard Package Name	TO-220
Pin Count	3
Mounting	Through Hole
Package Height	15.87
Package Length	10.16
Package Width	4.7
PCB changed	3
Tab	Tab
Lead Shape	Through Hole

FDPF10N60NZN Channel Npn Bipolar Transistor 38W Tc Through Hole TO 220F 0

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