CJ2310 S10 Plastic Encapsulate Dual Gate Mosfet , High Power N Channel Mosfet

Product Description

CJ2310 S10 NPN PNP Transistors N-Channel MOSFET Plastic-Encapsulate MOSFETS

DESCRIPTION

The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application.

FEATURE 

High power and current handing capability 

Lead free product is acquired 

Surface mount package

APPLICATION 

Battery Switch 

DC/DC Converter

Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter Symbol Value Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID 3 A
Pulsed Drain Current (note 1) I DM 10 A
Power Dissipation PD 0.35 W
Thermal Resistance from Junction to Ambient (note 2) R θJA 357 ℃/W
Junction Temperature TJ 150 ℃
Storage Temperature TSTG -55~+150 ℃

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