MT29F64G08CBABAWP Nand Flash IC Memory Chip 8GX8 Plastic PBF TSOP 3.3V Mass Storage

Product Description

MT29F64G08CBABAWP:B IC Memory Chip NAND FLASH 8GX8 PLASTIC PBF TSOP 3.3V MASS STORAGE

Features

• Open NAND Flash Interface (ONFI) 1.0-compliant1

• Single-level cell (SLC) technology

• Organization – Page size x8: 2112 bytes (2048 + 64 bytes) – Page size x16: 1056 words (1024 + 32 words) – Block size: 64 pages (128K + 4K bytes) – Plane size: 2 planes x 2048 blocks per plane – Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks 16Gb: 16,384 blocks

• Asynchronous I/O performance – tRC/tWC: 20ns (3.3V), 25ns (1.8V)

• Array performance – Read page: 25µs 3 – Program page: 200µs (TYP: 1.8V, 3.3V)3 – Erase block: 700µs (TYP)

• Command set: ONFI NAND Flash Protocol

• Advanced command set – Program page cache mode4 – Read page cache mode 4 – One-time programmable (OTP) mode – Two-plane commands 4 – Interleaved die (LUN) operations – Read unique ID – Block lock (1.8V only) – Internal data move

• Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status

• Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion

• WP# signal: Write protect entire device

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