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IRFP240N Channel General Purpose Schottky Diode Silicon Rectifier Diode

Minimum Order Quantity : 10 PCS Price : Negotiation
Packaging Details : TUBE Delivery Time : STOCK
Payment Terms : T/T, Western Union , ESCROW Supply Ability : 10000PCS
Place of Origin: CHINA Brand Name: Vishay
Model Number: IRFP240

Detail Information

Categories: Transistors - FETs, MOSFETs - Single Drain To Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 180 MOhm @ 12A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Power Dissipation (Max): 150W (Tc)
High Light:

high current schottky diode

,

surface mount schottky diode

Product Description

IRFP240 General Purpose Rectifier Diode N-Channel 200V 20A (Tc) 150W (Tc) Through Hole

 

FEATURES

 

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Isolated Central Mounting Hole

• Fast Switching • Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC


DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.
 

 

 

 

 

Product Attributes Select All
Categories Discrete Semiconductor Products
  Transistors - FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series -
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3

 

 

 

IRFP240N Channel General Purpose Schottky Diode Silicon Rectifier Diode 0IRFP240N Channel General Purpose Schottky Diode Silicon Rectifier Diode 1

 

 

 

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