
SK34SMA 3A SMD Schottky Barrier Rectifier Diodes DO - 214AC
Contact Person : VIVI
Phone Number : 18124796596
WhatsApp : +18124796596
Minimum Order Quantity : | 10 PCS | Price : | Negotiation |
---|---|---|---|
Packaging Details : | TUBE | Delivery Time : | STOCK |
Payment Terms : | T/T, Western Union , ESCROW | Supply Ability : | 50000PCS |
Place of Origin: | CHINA | Brand Name: | VISHAY |
---|---|---|---|
Model Number: | IRF9640 |
Detail Information |
|||
Categories: | Transistors - FETs, MOSFETs - Single | Drain To Source Voltage (Vdss): | 200V |
---|---|---|---|
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) | Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 500 MOhm @ 6.6A, 10V | Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 10V | Power Dissipation (Max): | 125W (Tc) |
High Light: | high current schottky diode,surface mount schottky diode |
Product Description
IRF9640 General Purpose Rectifier Diode P-Channel 200V 11A (Tc) 125W (Tc) Through Hole
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
Product Attributes | Select All |
Categories | Discrete Semiconductor Products |
Transistors - FETs, MOSFETs - Single | |
Manufacturer | Vishay Siliconix |
Series | - |
Packaging | Tube |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 500 mOhm @ 6.6A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 125W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Deli electronics tehcnology co ltd
www.icmemorychip.com
Email:sales3@deli-ic.com
Skype:hkdeli881
TEL:86-0755-82539981
Enter Your Message