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Home ProductsGeneral Purpose Rectifier DiodeIRF9640 General Purpose Rectifier Diode P Channel 200V 11A ( Tc ) 125W
IRF9640 General Purpose Rectifier Diode P Channel 200V 11A ( Tc ) 125W
IRF9640 General Purpose Rectifier Diode P Channel 200V 11A ( Tc ) 125W IRF9640 General Purpose Rectifier Diode P Channel 200V 11A ( Tc ) 125W IRF9640 General Purpose Rectifier Diode P Channel 200V 11A ( Tc ) 125W IRF9640 General Purpose Rectifier Diode P Channel 200V 11A ( Tc ) 125W
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IRF9640 General Purpose Rectifier Diode P Channel 200V 11A ( Tc ) 125W

Minimum Order Quantity : 10 PCS Price : Negotiation
Packaging Details : TUBE Delivery Time : STOCK
Payment Terms : T/T, Western Union ， ESCROW Supply Ability : 50000PCS
Place of Origin: CHINA Brand Name: VISHAY
Model Number: IRF9640

Detail Information
Categories: Transistors - FETs, MOSFETs - Single Drain To Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 500 MOhm @ 6.6A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Power Dissipation (Max): 125W (Tc)
High Light:

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Product Description

IRF9640 General Purpose Rectifier Diode P-Channel 200V 11A (Tc) 125W (Tc) Through Hole

 

 

 

FEATURES

 

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• P-Channel

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

 

DESCRIPTION

 

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
 

 

 

 

Product Attributes Select All
Categories Discrete Semiconductor Products
　 Transistors - FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series -
Packaging Tube
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 500 mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB

 

 

 

IRF9640 General Purpose Rectifier Diode P Channel 200V 11A ( Tc ) 125W 0IRF9640 General Purpose Rectifier Diode P Channel 200V 11A ( Tc ) 125W 1

 

 

 

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