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IRF3205 General Purpose Rectifier Diode N Channel Through Hole TO 220AB

Minimum Order Quantity : 10 PCS Price : Negotiation
Packaging Details : TUBE Delivery Time : STOCK
Payment Terms : T/T, Western Union , ESCROW Supply Ability : 20000PCS
Place of Origin: CHINA Brand Name: IR
Model Number: IRF3205

Detail Information

Categories: Transistors - FETs, MOSFETs - Single Drain To Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 8 MOhm @ 62A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 146nC @ 10V Power Dissipation (Max): 200W (Tc)
High Light:

high current schottky diode

,

surface mount schottky diode

Product Description

IRF3205 General Purpose Rectifier Diode N-Channel 55V 110A (Tc) 200W (Tc) Through Hole TO-220AB

 

 Advanced Process Technology 

Ultra Low On-Resistance 

Dynamic dv/dt Rating 

175°C Operating Temperature 

Fast Switching 

Fully Avalanche Rated


Description

 

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

 

 

 

Product Attributes Select All
Categories Discrete Semiconductor Products
  Transistors - FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8 mOhm @ 62A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 146nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3247pF @ 25V
FET Feature -
Power Dissipation (Max) 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

 

IRF3205 General Purpose Rectifier Diode N Channel Through Hole TO 220AB 0IRF3205 General Purpose Rectifier Diode N Channel Through Hole TO 220AB 1

 

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