
SK34SMA 3A SMD Schottky Barrier Rectifier Diodes DO - 214AC
Contact Person : VIVI
Phone Number : 18124796596
WhatsApp : +18124796596
Minimum Order Quantity : | 5-10pcs | Price : | To be negotiated |
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Packaging Details : | Tube | Delivery Time : | in stock 2-3days |
Payment Terms : | T/T, Western Union,paypal | Supply Ability : | 10,000PCS |
Place of Origin: | Germany | Brand Name: | INFINEON/IR |
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Certification: | CE/ RoHS | Model Number: | IRGB10B60KDPBF |
Detail Information |
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PN: | IRGB10B60KDPBF | Brand: | INFINEON/IR |
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Original: | Germany | Type: | Insulated Gate Bipolar Transistor Ultrafast Soft Recovery Diode |
Voltage: | IGBT 600V 22A 156W | Package: | TO220AB |
High Light: | 156W Insulated Gate Bipolar Transistor,22A Insulated Gate Bipolar Transistor,IGBT Bipolar Recovery Diode |
Product Description
IRGB10B60KDPBF # Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode IGBT
600V 22A 156W TO220AB
Part Number | IRGB10B60KDPBF |
Manufacturer | Infineon |
Categories Discrete Semiconductor Products Transistors - IGBTs - Single Manufacturer | Infineon |
Packaging | Tube |
Original | Germany |
Part Status | Active |
IGBT Type | NPT |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 22A |
Current - Collector Pulsed (Icm) | 44A |
Vce(on) (Max) @ Vge Ic | 2.2V @ 15V 10A |
Power - Max | 156W |
Switching Energy | 140µJ (on) 250µJ (off) |
Input Type | Standard |
Gate Charge | 38nC |
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