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IGBT 600V 22A 156W Insulated Gate Bipolar Transistor IRGB10B60KDPBF

Minimum Order Quantity : 5-10pcs Price : To be negotiated
Packaging Details : Tube Delivery Time : in stock 2-3days
Payment Terms : T/T, Western Union,paypal Supply Ability : 10,000PCS
Place of Origin: Germany Brand Name: INFINEON/IR
Certification: CE/ RoHS Model Number: IRGB10B60KDPBF

Detail Information

Original: Germany Type: Insulated Gate Bipolar Transistor Ultrafast Soft Recovery Diode
Voltage: IGBT 600V 22A 156W Package: TO220AB
High Light:

156W Insulated Gate Bipolar Transistor


22A Insulated Gate Bipolar Transistor


IGBT Bipolar Recovery Diode

Product Description

IRGB10B60KDPBF # Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode IGBT

600V 22A 156W TO220AB



• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
Part Number IRGB10B60KDPBF
Manufacturer Infineon 
Categories Discrete Semiconductor Products Transistors - IGBTs - Single Manufacturer Infineon 
Packaging Tube
Original  Germany
Part Status Active
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 22A
Current - Collector Pulsed (Icm) 44A
Vce(on) (Max) @ Vge Ic 2.2V @ 15V 10A
Power - Max 156W
Switching Energy 140µJ (on) 250µJ (off)
Input Type Standard
Gate Charge 38nC


IGBT 600V 22A 156W Insulated Gate Bipolar Transistor IRGB10B60KDPBF 0
IGBT 600V 22A 156W Insulated Gate Bipolar Transistor IRGB10B60KDPBF 1
Deli electronics tehcnology Co.,Ltd.
Contact: VIVI-CHEN

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