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Home ProductsGeneral Purpose Rectifier DiodeIGBT 600V 22A 156W Insulated Gate Bipolar Transistor IRGB10B60KDPBF
IGBT 600V 22A 156W Insulated Gate Bipolar Transistor IRGB10B60KDPBF
IGBT 600V 22A 156W Insulated Gate Bipolar Transistor IRGB10B60KDPBF IGBT 600V 22A 156W Insulated Gate Bipolar Transistor IRGB10B60KDPBF IGBT 600V 22A 156W Insulated Gate Bipolar Transistor IRGB10B60KDPBF IGBT 600V 22A 156W Insulated Gate Bipolar Transistor IRGB10B60KDPBF
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IGBT 600V 22A 156W Insulated Gate Bipolar Transistor IRGB10B60KDPBF

Minimum Order Quantity : 5-10pcs Price : To be negotiated
Packaging Details : Tube Delivery Time : in stock 2-3days
Payment Terms : T/T, Western Union,paypal Supply Ability : 10,000PCS
Place of Origin: Germany Brand Name: INFINEON/IR
Certification: CE/ RoHS Model Number: IRGB10B60KDPBF

Detail Information
PN: IRGB10B60KDPBF Brand: INFINEON/IR
Original: Germany Type: Insulated Gate Bipolar Transistor Ultrafast Soft Recovery Diode
Voltage: IGBT 600V 22A 156W Package: TO220AB
High Light:

156W Insulated Gate Bipolar Transistor

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22A Insulated Gate Bipolar Transistor

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IGBT Bipolar Recovery Diode

Product Description

IRGB10B60KDPBF # Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode IGBT

600V 22A 156W TO220AB

 

 

Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free
 
 
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
 
 
Part Number IRGB10B60KDPBF
Manufacturer Infineon 
Categories Discrete Semiconductor Products Transistors - IGBTs - Single Manufacturer Infineon 
Packaging Tube
Original  Germany
Part Status Active
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 22A
Current - Collector Pulsed (Icm) 44A
Vce(on) (Max) @ Vge Ic 2.2V @ 15V 10A
Power - Max 156W
Switching Energy 140µJ (on) 250µJ (off)
Input Type Standard
Gate Charge 38nC

 

IGBT 600V 22A 156W Insulated Gate Bipolar Transistor IRGB10B60KDPBF 0
 
IGBT 600V 22A 156W Insulated Gate Bipolar Transistor IRGB10B60KDPBF 1
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