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GT20J101 Thyristor Module Insulated Gate Bipolar Transistor Silicon N Channel

Minimum Order Quantity : 10 PCS Price : Negotiation
Packaging Details : TUBE Delivery Time : STOCK
Payment Terms : T/T, Western Union , ESCROW Supply Ability : 10000PCS
Place of Origin: CHINA Brand Name: TOSHIBA
Model Number: GT20J101

Detail Information

VCES: 600V VGES: +-20
IC: 20A ICP: 40A
PC: 130W Tj: 150°C
High Light:

insulated gate bipolar

,

thyristor diode module

Product Description

GT20J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

 

High Power Switching Applications

 

• The 3rd Generation • Enhancement-Mode

• High Speed: tf = 0.30 µs (max)

• Low Saturation Voltage: VCE (sat) = 2.7 V (max)

 

 

Characteristic Symbol Rating Unit
Collector-emitter voltage VCES 600 V
Gate-emitter voltage VGES +-20 V
Collector current  DC IC 20 A
Collector current  1 ms ICP 40 A
Collector power dissipation (Tc = 25°C) PC 130 W
Junction temperature Tj 150 °C
Storage temperature range Tstg −55~150 °C

 

 

GT20J101 Thyristor Module Insulated Gate Bipolar Transistor Silicon N Channel 0

 

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Skype:hkdeli881
TEL:86-755-82539981

 

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