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FDPF10N60NZN Channel Npn Bipolar Transistor 38W Tc Through Hole TO 220F

Minimum Order Quantity : 10 pcs Price : Negotiation
Packaging Details : TUBE Delivery Time : STOCK
Payment Terms : T/T, Western Union , ESCROW Supply Ability : 10000pcs
Place of Origin: CHINA Brand Name: FSC
Model Number: FDPF10N60NZ

Detail Information

Category: Power MOSFET Maximum Drain Source Voltage (V): 600V
Maximum Gate Source Voltage (V): ±25V Maximum Gate Threshold Voltage (V): 5V
Maximum Continuous Drain Current (A): 10A Maximum Gate Source Leakage Current (nA): 10000NA
Maximum Drain Source Resistance (mOhm): 750@10V Typical Gate Charge @ Vgs (nC): 23@10V
High Light:

epitaxial planar pnp transistor

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silicon npn power transistors

Product Description

FDPF10N60NZ NPN PNP Transistors N-Channel 600V 10A (Tc) 38W (Tc) Through Hole TO-220F

 

N-Channel MOSFET  600V, 10A, 0.75
Features
 
•RDS(on) = 0.64 ( Typ.)@ VGS = 10V, ID = 5A
• Low Gate Charge ( Typ. 23nC)
• Low Crss ( Typ. 10pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS compliant
 

 

Description
 
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction

 

EU RoHS
Compliant with Exemption
ECCN (US) EAR99
Product Category Power MOSFET
Configuration Single
Process Technology UniFET II
Channel Mode Enhancement
Channel Type N
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 600
Maximum Gate Source Voltage (V) ±25
Maximum Gate Threshold Voltage (V) 5
Maximum Continuous Drain Current (A) 10
Maximum Gate Source Leakage Current (nA) 10000
Maximum IDSS (uA) 1
Maximum Drain Source Resistance (mOhm) 750@10V
Typical Gate Charge @ Vgs (nC) 23@10V
Typical Gate Charge @ 10V (nC) 23
Typical Input Capacitance @ Vds (pF) 1110@25V
Maximum Power Dissipation (mW) 38000
Typical Fall Time (ns) 50
Typical Rise Time (ns) 50
Typical Turn-Off Delay Time (ns) 70
Typical Turn-On Delay Time (ns) 25
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Packaging Tube
Supplier Package TO-220FP
Standard Package Name TO-220
Pin Count 3
Mounting Through Hole
Package Height 15.87
Package Length 10.16
Package Width 4.7
PCB changed 3
Tab Tab
Lead Shape Through Hole

 

 

 

FDPF10N60NZN Channel Npn Bipolar Transistor 38W Tc Through Hole TO 220F 0

 

 

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www.icmemorychip.com

Email:sales3@deli-ic.com
Skype:hkdeli881
TEL:86-0755-82539981

 

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