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2SB1261 10W General Purpose Rectifier Diode Silicon Epitaxial Planar Pnp Transistor

Minimum Order Quantity : 10 PCS Price : Negotiation
Packaging Details : BAG Delivery Time : STOCK
Payment Terms : T/T, Western Union , ESCROW Supply Ability : 10000PCS
Place of Origin: CHINA Brand Name: NEC
Model Number: 2SB1261

Detail Information

Collector-Base Voltage: -60V Collector-Emitter Voltage: -60V
Emitter-Base Voltage: -7V Collector Current-Continuous: -3A
Collector Power Dissipation @TC=25℃: 10W Junction Temperature: 150℃
Storage Temperature: -55~150℃ PACKAGE: TO126
High Light:

resistor equipped transistor

,

epitaxial planar pnp transistor

Product Description

 
 
 
 
2SB1261 General Purpose Rectifier Diode PNP Silicon Epitaxial Transistors
 
DESCRIPTION
·Low Collector Saturation Voltage
·High Power Dissipation- : PC= 10W(Max)@TC=25℃
·Complement to Type 2SD1899-K


APPLICATIONS
·Designed for use in audio amplifier and switching, especially in hybrid integrated circuits.
 
2SB1261 10W General Purpose Rectifier Diode Silicon Epitaxial Planar Pnp Transistor 0
 
 
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